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Our offered Product range includes VIISTA 3000XP system, AERA4 MASK INSPECTION system, CENTURA TETRA EUV ADVANCED RETICLE ETCH, CENTRIS ADVANTEDGE MESA ETCH system and CENTRIS SYM3 ETCH.

VIISTA 3000XP system

The VIISta 3000XP, built on the acclaimed Varian dual-magnet single-wafer architecture, delivers the angle precision required for advanced high-energy applications.

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AERA4 MASK INSPECTION system

Equipped with a new lithography-grade lens, the Aera4 system demonstrates improved signal-to-noise for both standard high-resolution applications and aerial inspection, making it the tool of choice for 1x nm technology nodes and for early-production EUV mask inspection. The system performs highly sensitive mask inspection, as required for double- and quadruple-patterning lithography technologies, while maintaining a very low false alarm rate.

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CENTRIS ADVANTEDGE MESA ETCH system

The groundbreaking Applied Centris platform clusters up to eight process chambers – six etch and two plasma clean chambers. A high-speed transfer robot enables the processing of up to 180 wafers per hour – making the system nearly twice as fast as competing alternatives. The two plasma clean chambers, which remove post-etch halogen residues, are incorporated into the vacuum loadlocks. This unique innovation enables an unprecedented number of etch processing chamber locations and doubles the capacity of traditional silicon etch systems.

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CENTURA TETRA EUV ADVANCED RETICLE ETCH

EUV photomasks differ fundamentally from conventional photomasks that selectively transmit 193nm wavelength light to project circuit patterns onto the wafer. At the 13.5nm wavelength used by EUV lithography, all photomask materials are opaque, so the mask contains complex multi-layer mirrors to reflect circuit patterns onto the wafer. These multi-layered EUV masks create unique etch challenges for critical dimensions (CD), profile, line edge roughness, selectivity, and defectivity control while maintaining mask reflectivity.

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CENTRIS SYM3 ETCH

As semiconductor scaling has continued, increasingly rigorous requirements for precision and uniformity in chip fabrication have propelled the first comprehensive redesign of the silicon etch chamber in over a decade. The resulting Applied Centris Sym3 system delivers world-class cross-wafer uniformity with unprecedented within-chip feature control in critical etch applications for high-volume manufacturing at the 1x10nm node and beyond.

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NOKOTA ECD system

The Nokota system expands the Applied Materials suite of electrochemical deposition systems with a high-productivity wafer-level packaging tool that delivers best-in-class performance for the full range of plating steps used in diverse packaging schemes. These range from flip chip and wafer-level chip-scale packages to 2D and 3D fan-out, 2.5D interposer designs, and through-silicon via. Systems are available for 150mm, 200mm, and 300mm operation, and for simultaneous processing of 150mm200mm and 200mm300mm wafers. Copper, tinsilver alloy, nickel, gold, tin, and palladium are the metals most commonly used, although others can be accommodated.

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CENTURA ADVANTEDGE MESA ETCH

Advanced chamber materials reduce cost of ownership and increase throughput by making possible "clean-mode" operation. In addition, first-wafer effects are eliminated, thereby ensuring wafer-to-wafer process repeatability, as proven in production.

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PROVISION EBEAM INSPECTION SYSTEM

As design rules scale into the single-digit nodes and device architectures become progressively denser and more complex, fabrication processes involve more steps, process control limits become tighter, and killer defects become smaller. These challenges make defect discovery and characterization ever more crucial in producing high yields of reliable, high-performance chips.

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CENTURA TETRA Z PHOTOMASK ETCH

The Applied Centura Tetra Z Photomask Etch system delivers state-of-the-art performance required to etch optical lithography photomasks for logic and memory devices at 10nm and beyond. The new system enhances the capabilities of the industry-leading Tetra platform to address advanced resolution enhancement techniques and extend immersion lithography for quadruple patterning with unprecedented CD performance.

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OLYMPIA ALD system

Continued process scaling is driving new levels of device performance. ALD is essential for a growing number of the device-critical process steps in 3D NAND and logic FinFET fabrication. However, while the conformality and uniform film thickness achieved with ALD is still vital for CD control, additional demands are being made on ALD to deliver a growing range of high-quality, robust films within restrictive thermal budgets of next-generation nodes.

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CENTURA EPI 200MM

In support of evolving Power and MEMS device requirements, device manufacturers are targeting thicker Epi layers. With film thicknesses ranging from 50µm to 110µm, and tighter fabrication tolerances for Rs (sheet resistance) uniformity, defect density, thickness and particle performance, the market is moving away from batch toward single-wafer processing.

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VIISta 900 3D system

The Varian VIISta 900 3D system succeeds the Varian VIISta 900 XPT as the industry’s flagship medium-current ion implanter for high-volume manufacturing. The new system addresses escalating requirements for implant (or doping) precision and the demand for zero-defect performance in fabricating emerging 3D device architectures beyond the 2xnm node. Its beam line architecture has been specially designed with the angle accuracy and beam shape control necessary for exact dopant placement and minimal within-wafer and wafer-to-wafer variability for a variety of applications in logic FinFETs and 3D memory structures. In addition, these capabilities benefit CMOS image sensor technology as well as the most advanced planar structures.

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PRODUCER AVILA PECVD system

The Applied Producer Avila PECVD system's family of high quality oxide and nitride films meet the low thermal budgets and high productivity required for TSV and other advanced packaging applications.

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REFLEXION LK PRIME CMP

The Applied Reflexion® LK Prime™ CMP system enhances previous-generation planarization technology to achieve nanometer-level precision for FinFET and 3D NAND applications. This degree of precision is vital as the smallest variation in gate height degrades performance and yield of the devices.

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CHARGER UBM PVD system

The Applied Materials Charger UBM PVD system defines a new standard in metal deposition productivity and reliability for chip packaging. Specifically designed for UBM, redistribution layer (RDL), and CMOS image sensor applications, the Charger system's new linear architecture more than doubles the wafer output of competing systems to deliver the highest productivity available. In addition, proprietary Isani wafer treatment technology allows the system to process ten times more wafers between servicing for best-of-breed uptime and the lowest available per-wafer cost.

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ENDURA PVD 200MM

Today’s 200mm Physical Vapor Deposition (PVD) challenges focus on the ability to deposit thicker, highly uniform, low temperature compatible films. In the power device market, devices with reduced form-factor and footprint that are capable of switching at high speeds are driving the requirement for advanced heat dissipation technologies such as Al layers in the thickness range of 4µm to over 100µm.

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PRODUCER CELERA PECVD system

The Applied Producer Celera PECVD system deposits tunable compressive and tensile high-stress silicon nitride films for strain engineering applications at 45nm and below.

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Endura HAR Cobalt PVD system

In advanced devices, the speed of data transfer from DRAM structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates and contacts. The Endura HAR Cobalt PVD system lowers resistance in periphery contacts to enable higher drive current at lower voltage.

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5i CD-SEM system

The newest in the Applied Materials VeritySEM product family, VeritySEM 5i CD-SEM system features first-of-its-kind, in-line, 3D capabilities for high-volume metrology of logic and memory devices at the 1xnm node and beyond. Leveraging market-leading SEMVision® G6 core technology, the new system addresses the unprecedented challenges in measuring physical dimensions posed by leading-edge geometries. Its state-of-the-art, high-resolution SEM column makes possible measurements as small as 6nm; innovative image enhancement algorithms aid measurement of fine pattern details. An in-column tilt-beam enables 3D FinFET metrology, while back-scattered electron (BSE) metrology addresses high aspect ratio 3D NAND structures, and BEOL via-in-trench bottom CD and characterization metrology.

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VANTAGE VULCAN RTP

A major spike annealing challenge at 3228nm node and below is minimizing temperature differences arising from variations in radiant energy absorption within a die. This phenomenon is known as the pattern loading effect (PLE). The Vulcan system “turns technology upside down” to minimize PLE using heating lamps located below the wafer to achieve superior heating uniformity.

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SEMVISION G6 DEFECT ANALYSIS SYSTEM

Defect review, analysis, and classification are vital in semiconductor fabrication, providing the means to monitor and control the quality of individual steps in the manufacturing sequence. Shrinking feature dimensions and the transition to 3D devices make complete and accurate imaging more challenging.

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ENDURA EXTENSA TTN system

The Applied Endura Extensa TTN offers customers integration flexibility in transitioning to copper interconnect for improved device performance. Its robust deposition technology delivers a production-worthy process for barrier deposition in Flash and DRAM devices at 5xnm and below.

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REFLEXION LK CMP

Applied Reflexion LK CMP provides production-proven, high performance planarization solutions for copper damascene, shallow trench isolation, oxide, polysilicon, and tungsten applications. Its high-speed planarizing platens and multi-zone polishing heads enable superior uniformity and efficiency with low downforce for extendibility to

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chemical mechanical planarization platform

Our Reflexion platform is the industry’s leading chemical mechanical planarization (CMP) platform, used for all segments (logic, foundry, DRAM , Flash , prime silicon, and wafer-level packaging) and the full complement of dielectric and metal applications. Systems using Reflexion platforms are equipped with industry-leading Titan polishing heads, in-situ process controls, and Marangoni vapor drying technologies. They also incorporate our unique approach to transporting wafers directly from one polishing platen to the next.

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PRODUCER DARC PECVD system

Applied Producer DARC PECVD is the industry-leading anti-reflective coating film for minimizing reflectivity, reducing photoresist poisoning, and improving photoresist adhesion for ≤90nm technologies.

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ENDURA ALPS PVD system

The Applied Endura ALPS (Advanced Low-Pressure Source) Cobalt PVD (Physical Vapor Deposition) system offers a simple, high-performance silicide solution for gate and contact applications in high aspect ratio structures. Extending cobalt to ≤90nm technology nodes, ALPS technology produces good Co bottom coverage with no plasma damage to the device and very low defect counts. Endura ALPS Co addresses the challenges of titanium agglomeration, contact resistance change, and dopant suction through excellent resistivity, low leakage current, and thermal stability

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AERIS G PLASMA ABATEMENT SYSTEM

The ALTA 4700plus system provides cost-effective patterning of binary masks and phase shifting masks (PSM), supporting fast turnaround and shortened design cycles. High NA optics and a DUV laser produce the sharply focused beams needed to write photomask patterns with high resolution and tight dimensional control. Improved stage control enhances pattern placement accuracy, enabling precise matching between the masks in a set. The second-level alignment system provides the tight overlay needed to produce advanced PSM masks, which are used in greater numbers as wafer lithography is pushed to its limits. The non-exposing alignment light uses the same optical path as the exposure beam, avoiding baseline offsets and ensuring stable production performance.

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ISYSTEM CONTROLLER

The Applied iSystem controller is the industry’s only subfab solution that optimizes subfab resource consumption without any risk to process or throughput. Many customers have achieved rapid ROI after iSystem controller installation.

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ANTAGE RADIANCE PLUS RTP system

The Applied Vantage RadiancePlus RTP system is the industry-leading, high-productivity solution for high-volume, atmospheric RTP applications, combining world-class RTP chamber technology with a production-proven, low CoO platform. Its streamlined design allows for shipment as a single unit, enabling faster start-up and reduced shorter time to production.

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ENDURA AL PVD system

The Endura Al Slab PVD (Physical Vapor Deposition) system deposits aluminum over tungsten plugs in Logic and DRAM devices to form metal wiring. The system provides superior electromigration resistance and surface morphology as well as low cost of ownership and high system reliability.

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interconnect

Interconnects, the conductive metal wires that connect transistors and other elements of an integrated circuit, are critical to the speed and reliability of a microchip. Because modern microprocessors can have as many as ten levels of interconnects, this intricate structure is one of the most process-intensive – thus most costly – portions of the total chip fabrication process

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WAFER-LEVEL PACKAGING

Wafer-level packaging enables rich graphics, high speed, and low-power functionality in mobile, “smart” electronic consumer products. It is also used in fabricating Internet-of-Things devices in automotive, medical, and industrial applications, and is essential for high-performance computing applications. Different types of wafer-level packaging are used in these different market segments.

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ENDURA platform

Our Endura platform is the most successful metallization system in the history of the semiconductor industry. Endura systems revolutionized semiconductor metallization by delivering breakthrough technologies and levels of reliability, serviceability and flexibility that far surpassed existing capabilities. The vast majority of microchips made in the last 20 years have been created using one of the more than 4, 500 Endura systems that have shipped across the globe to over 100 customers.

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producer

Our Producer platform is the fastest and most cost-effective in the industry, capable of processing more than three wafers every minute in a highly compact footprint. It features a robot that can simultaneously transfer four wafers between its three paired processing stations and unique double-decker vacuum loadlocks.

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ION IMPLANT system

Ion implantation (a form of doping) is integral to integrated circuit manufacturing. As the complexity of chips has grown, so has the number of implant steps. Today, a CMOS integrated circuit with embedded memory may require up to 60 implants.

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MEMS devices

The expanding use of MEMS devices, including accelerometers, gyroscopes and microphones, is a major contributor to the ongoing transformation of the mobile, automotive and medical device markets.

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pvd

PVD deposition processes are used in creating ultra-thin cap layers and metal gate films in high-kmetal gates for advanced transistors, and in forming ultra-thin barrier materials and seed layers for interconnects.

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CENTURA ISPRINT TUNGSTEN

The system combines innovative ALD tungsten nucleation layer technology with the high-throughput Sprint CVD tungsten bulk fill process to deliver CMP-compatible tungsten plugs. The ALD process reduces the nucleation thickness from typical CVD values of 300Å to as thin as 12Å, while maintaining excellent barrier performance for reliable, repeatable integration with PVD TiMOCVD TiN linerbarriers. The iSprint system also delivers high throughput and low cost of consumables with an optimized ALD chamber design featuring a proprietary rapid gas delivery system and small chamber volume that enable fast, effective gas purging that uses less gas.

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CENTURA POLYGEN LPCVD

Applied Centura POLYgen LPCVD (Low Pressure Chemical Vapor Deposition) combines advanced process capability with production-proven hardware, offering film morphology control and in-situ doping of silicon (P, As) and polycrystalline Si1-xGex with excellent film uniformity. Integration with the oxynitride formation has proven to reduce EOT by >1Å. The system offers optimized temperature uniformity within the 400-800°C range. Control of grain size and orientation enables deposition of film morphologies ranging from amorphous silicon to randomly-oriented, micro-crystalline grains to columnar grains. In-situ cleaning capability ensures high productivity.

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CENTURA SINGEN PLUS LPCVD

Applied Centura SiNgenPlus LPCVD (Low Pressure Chemical Vapor Deposition) is a single-wafer LPCVD silicon nitride deposition system that overcomes the primary limitations of batch furnaces. The system delivers low-temperature deposition, film stress and RI tuning capability, and low particle counts for front-end silicon nitride applications. SiNgenPlus reliably delivers wafer-to-wafer repeatability essential for volume production of applications such as etch stop and spacer.

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CENTURA ETCH 200MM

Patterning is one of the most critical and challenging of all semiconductor production operations. Whether etching a gate, a transistor isolation trench, a high aspect ratio contact, or any level interconnect aluminum or dielectric film; maintaining precise, repeatable and uniform control of critical dimension is the key to device yield.

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RAPID THERMAL PROCESSING

Rapid thermal processing is used repeatedly during semiconductor device manufacturing for such purposes as activating implanted dopants or changing the state (or phase) of materials to enhance desired attributes (e.g., conductivity). Soak, spike, or millisecond anneals and dry rapid oxidation are applied to different applications.

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Olympia

Continued process scaling is driving new levels of device performance. ALD is essential for a growing number of the device-critical process steps in 3D NAND and logic FinFET fabrication. However, while the conformality and uniform film thickness achieved with ALD is still vital for CD control, additional demands are being made on ALD to deliver a growing range of high-quality, robust films within restrictive thermal budgets of next-generation nodes.

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ENDURA AMBER PVD

The unique Endura Amber PVD system resolves this difficulty with a proven all-in-one method that combines cold deposition and high-temperature thermal copper reflow to supersede EnCoRe II RFX copper seed technology. Copper overhang around the openings of ultra-small vias at the 1xnm node precludes conventional PVD from achieving the sidewall and bottom seed layer coverage required for optimal electroplating. The new system extends the current technology by augmenting PVD deposition with copper reflow to enable bottom-up fill. This two-step technique makes electroplating easier by either reducing the effective aspect ratio of the vias (when applied once) or completely filling the vias (when iteratively applied). It thus increases the surety of the void-free fill necessary for device reliability. Independent temperature control for each step of the depositionreflow cycle offers flexibility for successfully integrating this process with a variety of liner materials. This innovative copper seed technology is integrated on the Endura platform with pre-clean and EnCoRe II Ta(N) barrier technologies under high-vacuum conditions to enable high device yields in volume production.

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ENDURA AVENIR RF PVD system

For high aspect ratio Ni(Pt) logic contact silicidation, the system operates in high-pressure, capacitively coupled plasma mode that produces higher metal ionization density and hence better bottom coverage.

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AERIS G PLASMA ABATEMENT SYSTEM

The Applied Aeris™-G system is a pre-pump plasma abatement solution that uses less energy by treating the actual process gas volume—a smaller and more concentrated volume than what is treated by post-pump abatement units. The plasma dissociation combined with the low volume of nitrogen in the Aeris-G chamber during abatement minimizes NOx emissions to near zero. The Aeris-G unit operates "on-demand, " further reducing operating costs compared to energy-hungry, continuous operation post-pump abatement.

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CENTURA AVATAR ETCH

Conventional planar flash memory technology is approaching critical scaling limitations that are driving the transition to 3D solutions. This creates significant challenges for dielectric etching, especially of high aspect ratio (HAR) features. Furthermore, emerging 3D NAND architecture involves stacks of alternating dielectric layers that intensifies demands placed on the etch system. It must be capable of exacting profile control across the entire wafer for feature aspect ratios up to 80:1, high throughput, and exceptionally high tungsten selectivity for 3D NAND’s signature staircase contact.

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CENTURA SILVIA ETCH system

In the drive to maximize the functionality-to-volume ratio, device makers are integrating chips using schemes. TSV technology enables 3D interconnects by creating vertical pathways functioning as components of the integrated circuit to connect stacked chips or wafers. The Applied Centura Silvia Etch system is specifically designed for the challenging deep silicon etch required to create the vertical connections between the chips or wafers. It is the only TSV etch system to overcome the tradeoff between profile control and high etch rate faced by conventional methods. The system’s high-density plasma source enables the highest silicon and oxide etch rates for all wafer-level packaging applications.

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PRODUCER ETERNA FCVD system

With the Eterna FCVD system, Applied continues its decade-long leadership in delivering gap-fill technology advances to the semiconductor industry. These innovations have provided customers with unique, simplified, and cost‑effective solutions to meet the challenges of multiple chip generations.

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ENDURA CUBS RFX PVD system

The Applied Endura CuBS (Copper BarrierSeed) RFX PVD system serves logic and memory applications at the 3x2x node and beyond. The SIP (Self-Ionized Plasma) EnCoRe II Ta(N) barrier and EnCoRe II RFX Cu seed process chambers feature high-ionization PVD technology that delivers full-coverage, low-temperature film deposition, with minimal overhang and smooth morphology.

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