Veeco

Precision Surface Processing's single wafer wet etch technology enables uniform selective etching on multiple process levels, free of cross-contamination. Etch uniformity better than 1% is routine. Whether for advanced packaging or FEOLBEOL wet etches, WaterEtch™ systems accomplish the highest yield process at the lowest manufacturing cost. When etch structures or films are needed in the active, backside, andor bevel areas, WaferEtch systems are a proven technical solution.The flagship of the WaferEtch platform, the TSV Revealer, is specifically configured to address the process of wafer thinning to reveal the interconnects. This has become a critical step in the manufacture of 2.5D and 3D-IC packaging for process control and cost reduction. The TSV Revealer replaces four tools required for the dry-etch approach: CMP, plasma etch, silicon thickness measurement, and wafer cleaning. Integration of a thickness measurement sensor in the etch system provides closed-loop control of the wafer etching process. The TSV Revealer achieves a significant reduction in CoO, making 3D TSVs more economically feasible. Features: Integrated thickness measurement Arm movement compensation for radial thickness non-uniformities Chemical recirculation for lowest CoO Small footprint

• Model NumberK475i As/P MOCVD

Veeco’s new TurboDisc K475i AsP MOCVD System is the industry’s best reactor for the production of red, orange, yellow (ROY) LEDs, as well as multi-junction III-V solar cells, laser diodes and transistors. The K475i system features a new reactor design incorporating Veeco’s Uniform FlowFlange™ technology producing films with very high uniformity and improved within-wafer and wafer-to-wafer repeatability with the industry’s lowest particle generation. The simple design of the Uniform FlowFlange technology provides ease-of-tuning for fast process optimization and fast tool recovery time after maintenance for the highest productivity for applications such as lighting, solar, laser diodes, pseudomorphic high electron mobility transistors (pHEMTs) and heterojunction bipolar transistors (HBTs). New Uniform FlowFlange technology design enables best-in-class uniformity and process repeatability capable of driving greater yields Robust reactor design provides ease-of-use and faster recovery after maintenance for maximum uptime Industry’s highest productivity due to full automation Production proven platform provides lowest cost of ownership

Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco's low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source. Introduces gas without thermal pre-cracking CBr4 source for C doping in III-Vs Complete CBr4 gas handling system offers precise control of dopant evaporation and incorporation More than 50 in the field

Veeco’s Precision Gas Mixing System generates gas mixtures with improved concentration control for tighter process control and higher yield. Active control of mixture concentration compensates for changes or drifts in upstream concentration. For example: out of a 1 percent dopant premix, the Piezocon Precision Gas Mixing System can generate a 50ppm dopant gas mixture with a ± 0.5ppm or better concentration control, tank to tank and over the shelf life of the tank. Cost savings: sourcing from a pure or from a higher concentration gas blend reduces frequency of tank exchange and minimizes tool down time; high ROI Versatile: can handle most commonly used precursor or dopant gas mixtures Convenient: allows process engineers to dial in the concentration required by the process at point-of-use over a wide range of concentration Simpler logistics: allows facility engineers to reduce inventory of multiple concentration gas mixture Ease-of-use: friendly user interface allows selection of active gas and of dilution gas, and setting point-of-use required concentration Compact: can be installed in a small vented enclosure or VMB For compliance with industry safety protocols, the GMS must be installed in a standard SEMI-compliant gas box.

Produce the highest quality optical thin films with improved levels of productivity and throughput with the award-winning SPECTOR-HT™ Advanced Ion Beam Sputtering System. Building on the proven performance of our SPECTOR® family of ion beam systems, the SPECTOR-HT system offers excellent layer thickness control, enhanced process stability and the lowest published optical losses in the industry. For cutting-edge optical interference coating applications ranging from bandpass filters to beam splitters to laser passives, the SPECTOR-HT has been engineered to improve key production parameters, such as target material utilization, optical endpoint control and process time. The SPECTOR-HT gives manufacturers the qualitative advantages of ion beam sputtering (IBS) technology—low scatter loss, high film purity, stable deposition rates and film thickness control of

Veeco's award-winning GENxplor™ R&D MBE System uses Veeco’s proven GEN10™ MBE system growth chamber design and features unmatched process flexibility, perfect for materials research on emerging technologies such as UV LEDs, high-efficiency solar cells and high-temperature superconductors. Its efficient single frame design combines all vacuum hardware with on-board electronics to make it up to 40 percent smaller than other MBE systems, saving valuable lab space. Because the manual system is integrated on a single frame, installation time is reduced. The open architecture design of the GENxplor MBE system also improves ease-of-use, provides convenient access to effusion cells and easier serviceability when compared to other MBE systems. When coupled with Veeco’s recently introduced retractable sources, the GENxplor MBE system represents the state-of-the-art in oxide materials research. High quality epitaxial layers on substrates up to 3" in diameter Unique, single frame architecture improves ease-of-use, provides convenient source access and enhanced serviceablility Efficient, all-in-one design combines manual system with on-board electronics for 40 percent lab space savings compared to other MBE systems Ideal for cutting-edge research on a wide variety of materials including GaAs, nitrides and oxides Molly® software integrates easy recipe writing, automated growth control and always-on data recording Optional Nova™ ultra high temperature substrate heater for proven performance at 1850° Direct scalability to GEN20™, GEN200® and GEN2000® MBE systems