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Our Complete range of products are Inmet Brand Bias Tees, Lowpass Filters, bandpass filters, High Power Amplifier and Power Amplifier Modules.

Inmet Brand Bias Tees

API Technologies manufactures Inment Brand Bias Tees in frequencies up to 50 GHz with multiple connector configurations.

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bandpass filters

API Technologies’ reputation for designing and delivering some of today’s most challenging Bandpass filters is the reason why engineers trust us with their designs. Choosing from a wide assortment of topologies, including lumped element, cavity, ceramic, SAW, tubular, suspended substrate, and waveguide; our engineers match the optimum topology to your requirements. Unlike one dimensional filter companies, SMI continues to prove that by offering multiple options, a customer can weigh the benefits of: size vs. loss, rejection vs. size, selectivity vs. group delay...and select the best filter to optimize system performance.

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Lowpass Filters

API’s reputation for designing and delivering some of today’s most challenging Lowpass filters is the reason why engineers trust us with their designs. Choosing from a wide assortment of topologies, including lumped element, tubular and suspended substrate. Our engineers match the optimum topology to your requirements. Unlike one dimensional filter companies, SMI continues to prove that by offering multiple options, a customer can weigh the benefits of: size vs. loss, rejection vs. size, selectivity vs. group delay...and select the best filter to optimize system performance.

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High Power Amplifier

Power Amplifier Subsystems & Power Amplifier Integrated Assemblies Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating multi-band amplifiers, switched harmonic filter banks and high efficiency DC converters with integrated adaptive biasing controls to ensure high reliability. Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors. Amplifiers are offered in class ‘A, ’ ‘AB, ’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW.

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Power Amplifier Modules

  • Series Wide range of technologies, products available as standard of customizable designsse

POWER AMPLIFIER MODULES, DRIVERS & SUBSYSTEMS Wide range of technologies, products available as standard of customizable designs Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, API Technologies' power amplifiers draw from a wide range of leading edge semiconductors. Amplifiers designs cover operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of integrated power amplifier assemblies incorporating multi-band amplifiers, switched harmonic filter banks and high efficiency DC converters with integrated adaptive biasing controls to ensure high reliability.

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HIGH POWER AMPLIFIER MODULES

  • Series GaN, GaAs MESFET, E-pHEMT, LDMOS, Class A, Class AB, Class C, broadband, hybrid, fully-modifiable, RF, microwave power amplifier modules

HIGH POWER AMPLIFIER MODULES GaN, GaAs MESFET, E-pHEMT, LDMOS, Class A, Class AB, Class C, broadband, hybrid, fully-modifiable, RF, microwave power amplifier modules Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors. Amplifiers are offered in class ‘A, ’ ‘AB, ’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating multi-band amplifiers, switched harmonic filter banks and high efficiency DC converters with integrated adaptive biasing controls to ensure high reliability.

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PULSED POWER AMPLIFIERS

GaN-Based Power Amplifiers for TWT Amplifier Replacement API Technologies' line of Gallium Nitride (GaN) Power Amplifiers utilize pulsed, solid state power amplifier technology and include designs that operate with output power levels up to 1, 000 watts and frequencies to 18 GHz. These power amplifiers serve as cost-effective replacements for traveling wave tube (TWT) amplifiers and offer longer life, better efficiencies and reduced size and weight than their TWT counterparts.

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GaN POWER AMPLIFIERS & DRIVERS

  • Series High Power and Efficiency Using Latest GaN Technology

High Power and Efficiency Using Latest GaN Technology API Technologies' complete line of Gallium Nitride (GaN) based power amplifiers and power amplifier drivers offer unparalleled reliability and performance. Utilizing the intrinsic physical properties of GaN like high heat capacity and thermal conductivity, these durable power amplifier solutions operate at a high output power over wide bandwidths. API's GaN-based amplifier solutions are ideal for use in applications including military and commercial radar, communication transmitters, jamming systems, optical drivers, and medical imaging electronics. Explore API Technologies GaN Power Amplifier Designs

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POWER AMPLIFIER CAPABILITIES

High Power Amplifier Modules power amplifier At API Technologies, our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Several standard options are available as well as custom solutions designed for customer specifications. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters. API's power amplifiers feature a unique void-free, low thermal resistance die attach process ensuring exceptional reliability and stability for critical military and commercial applications. Capabilities Broad Range of Technologies and Designs API's power amplifiers are manufactured utilizing in-house thin and thick film technology as well as conventional PC board designs. In-house chip and wire (hybrid) and SMT manufacturing. Linear & Non-linear Simulations We utilize advanced RF & Microwave linear and non-linear simulation for rapid prototyping and a reduced design cycle. Our Push-Pull Design Techniques, coupled with transistors that have been selected for high linearity characteristics, enable API Engineers to achieve this incredible performance including IP2 values of +120 dBm. Built-in Monitoring Dual band power conditioning and control with field downloadable firmware to support active reconfiguration with built-in monitoring. API Technologies achieves guaranteed ultra-low phase noise performance in its amplifiers using a combination of design techniques, material selection, and in-house testing. Thermal Simulation API utilizes state-of-the-art thermal simulation and scanning tools when designing high power amplifiers. Power Amplifier Applications Broadband Jamming Electronic Warfare Pulsed Radar Military Communications PA Modules with Integrated PSU Transmitters Digital Control Satellite Links Test Equipment

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PULSED POWER AMPLIFIER

  • Series GaN Solid State Pulsed Power Amplifiers

API Technologies’ Solid State Pulsed Power Amplifier products provide output power up to 1 kW and suited for wide band operation. These amplifiers utilize state of the art thermal simulation and scanning tools as well as multiple design technologies resulting in reduced size, excellent thermal performance, and improved reliability. Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size. 1kw Peak Output Power Typical frequency range of 9 - 9.8 GHz Efficiencies as high as 20% Up to 100 µsec pulse width, 10% duty cycle Targeted for TWT Amplifier Replacement White Paper: A GaN Solid State Amplifier Replacement for a 1kW Traveling Wave Tube Applications Include: Military and Commercial Radar Communication Transmitters Jamming Systems

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Power Amplifier

  • Series High Power Amplifier Integration

At API Technologies, our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Several standard options are available as well as custom solutions designed for customer specifications. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters. API's power amplifiers feature a unique void-free, low thermal resistance die attach process ensuring exceptional reliability and stability for critical military and commercial applications. Capabilities Broad Range of Technologies and Designs API's power amplifiers are manufactured utilizing in-house thin and thick film technology as well as conventional PC board designs. In-house chip and wire (hybrid) and SMT manufacturing. Linear & Non-linear Simulations We utilize advanced RF & Microwave linear and non-linear simulation for rapid prototyping and a reduced design cycle. Our Push-Pull Design Techniques, coupled with transistors that have been selected for high linearity characteristics, enable API Engineers to achieve this incredible performance including IP2 values of +120 dBm. Built-in Monitoring Dual band power conditioning and control with field downloadable firmware to support active reconfiguration with built-in monitoring. API Technologies achieves guaranteed ultra-low phase noise performance in its amplifiers using a combination of design techniques, material selection, and in-house testing. Thermal Simulation API utilizes state-of-the-art thermal simulation and scanning tools when designing high power amplifiers. Power Amplifier Integration Rack-Mount Power Amplifier Assemblies Integrated Power Amplifier Splitters Integrated Power Amplifier Filters Integrated Power Amplifier Switches PA Modules with Integrated PSU Power Amplifier Applications Broadband Jamming Electronic Warfare Pulsed Radar Military Communications Transmitters Digital Control Satellite Links Test Equipment

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MICROWAVE POWER AMPLIFIER CAPABILITIES

  • Series Silicon MOSFET, LDMOS, GaAs, GaN, and SiC Technologies

Silicon MOSFET, LDMOS, GaAs, GaN, and SiC Technologies At API Technologies, our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Products include broadband, high linearity designs, as well as high frequency, narrowband, higher power amplifiers to 1, 000 watts with emphasis on size and packaging. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters. Utilizing state of the art GaN transistor technology, API Technologies is able to overcome limitations in TWT (traveling wave tube) with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.

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WAVEGUIDE RECEIVER PROTECTOR SOLUTIONS

  • Series MALIML0024

S-Band 'Drop-in' Limiter Module This high reliability S-band ‘Drop-in’ limiter module features a weight and space saving design. By utilising GMIC (Glass Microwave Integrated Circuit) Technology, integration applications can benefit from both small feature size and high performance. This design has low insertion loss and high power handling capability, essential parameters for limiter applications. The same concepts can be applied to your particular integration needs. Please contact the factory for details. Overview High Reliability Designed for integrated applications Weight and space saving design High power handling Low insertion loss European Manufacture Highlights By utilising API Technologies GMIC (Glass Microwave Integrated Circuit) Technology, integration applications can benefit from both small feature size and high performance. This design has low insertion loss and high power handling capability, essential parameters for limiter applications. The same concepts can be applied to your particular integration needs.

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RF PHASE SHIFTERS

  • Series High Power, Trombone designs

Standard type N connectors; SMA connectors available High power (2500W peak, 350W average) and wide phase shift range MIL grade materials and processing Silver rhodium plating for superior insertion loss, durability and wear Shaft Lock, Turns Counters and other control options are available

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Novel Packaging

Because of our customer’s preexisting interface conditions, our engineers designed the diplexed output connectors to exit the bottom of the housing, matching up to the customer’s connectors. A customer requested a diplexerduplexer with very low insertion loss, extremely high rejection and a custom housing. Our engineers responded with a diplexerduplexer incorporating unconventional cross coupling, which exceeded the customer’s requirements.

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Thin Film Chip Resistors

  • Series Specific Core Competencies

Silicon or alumina substrate Resistor tolerance 0.1% Back side contact options Pre-soldered options Tantalum Nitride or Nickel Chrome resistor materials Passivation as required

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Rapid Filter Centers

API offers rapid cell Bandpass filters in the following topologies: surface mount Ceramic covering 400 MHz – 2500 MHz, Cavity with SMA connectors covering 800 MHz-20 GHz and Lumped Element covering 1 MHz-3 GHz with the following options: SMA connectors, surface mount or PC Pin. Rapid filter solutions are for moderate complexity, standard design options only. Filters within these restraints (for selected applications) can be delivered in as little as 2-4 weeks.

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Creative Layouts

Utilizing sophisticated software such as Sonnet EM Simulator and SolidWorks, creative layouts can be realized to optimize package size and electrical performance.

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Advanced SAW Filters

API Technologies continues to provide cutting edge SAW technology for today’s military and commercial markets in frequencies from 20 MHz to 2600 MHz.

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innovative designs

In order to optimize performance in a given package size, API Technologies engineers can utilize multiple topologies in a single design. API Technologies’ engineers routinely simulate proposed designs, meeting the customer’s specifications while optimizing performance, size and cost.

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High Power Waveguide Filters

API Technologies designs and manufactures waveguide filters to 40 GHz with peak power level handling of up to 50 kW.

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High Complexity Ceramic Filters

High complexity ceramic filters, like this 6 pole 2100 MHz design with a 450.5 dB shape factor of less than 3:1, are examples of the exceptional performance available.

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tubular filters

Tubular filters offer extremely high ultimate rejection, low insertion loss and high power handling. Learn more about our fully-customizable filters today!

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High Power Strategies

Careful analysis of current densities and heat dissipation allow for higher power handling and smaller package size.

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HIGH PERFORMANCE BROADBAND MIXERS

  • Series High Performance

Our mixers use high-performance monolithic diodes for superior isolation and the lowest loss possible. Synthesized input and output matching networks maintain maximum response flatness across the performance band. Learn about more of our customizable features in our Mixers Brochure!

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power dividers

  • Series Superior Performance

Our Wilkinson style power dividers offer unparalleled performance including excellent phase balance, extremely low loss and superior amplitude tracking. Our communications-dual band quadrature combiners feature low loss suspended stripline designs, a surface mount package, low passive intermod design, high power handling, lower cost packaging, low insertion loss, and type N connectors.

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  • Auburn, NY 13021, United States