Electronic Active Devices #5146400

The OLS400 has a high current transfer ratio (CTR) at low input currents, making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low-power logic interfacing or RS232C data transmission systems. Each OLS400 has an LED and integrated photodiode Darlington detector IC, mounted and coupled in a custom hermetic surface mount leadless chip carrier (LCC) package that provides 1500 VDC electrical isolation between the input and output. The Darlington detector has an integrated base-to-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than is possible with conventional photodarlington designs. Device mounting is achieved with reflow soldering or conductive epoxies. The pads are gold plated and RoHS compliant.FeaturesElectrical parameters guaranteed over 55 C to +125 C ambient temperature range1500 VDC electrical isolationLow input current, 0.5 mALow output VSAT, 0.1 V typicalHigh Current Transfer Ratio (CTR), 1000% typicalLow power consumptionSimilar to industry standard parts6N1386N139 in plastic, and 6N140 in hermetic Dual Inline Packages (DIPs)Offers 100% high reliability screenings

The OLI400 has a high current transfer ratio (CTR) at low input currents, which makes it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfaceRS-232C data transmission systems. Each OLI400 has an LED and integrated photodiode Darlington detector IC mounted and coupled in a miniature custom ceramic package that provides 1500 VDC electrical isolation between the input and output. The Darlington detector has an integrated base-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington designs. Device mounting is achieved by a standard hybrid assembly with non-conductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility. FeaturesElectrical parameters guaranteed over 55 C to +125 C ambient temperature range1500 VDC electrical isolationLow input current, 0.5 mALow output VCE-SAT, 0.1 V typicalHigh Current Transfer Ratio (CTR), 1000% typicalLow power consumptionSimilar to industry standard parts 6N1386N139 in plastic, and 6N140 in hermetic Dual Inline Packages (DIPs)Radiation tolerant design

The OLH57305731 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5731 product is a 100 percent high-reliability screened version of the OLH5730. Each channel consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode, split Darlington detector. The AlGaAs LED provides superior low current performance. The split Darlington open collector output results in high gain and low saturation voltage. The OLH57305731 products are functionally compatible to the HCPL27302731 and 6N140A optocouplers. The performance of the OLH57305731 products under a radiation environment is significantly improved over standard phototransistors.

The OLH57005701 are hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5701 product is a 100 percent high-reliability screened version of the OLH5700. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode, split Darlington detector. The AlGaAs LED provides superior low current performance. The split Darlington open collector output results in high gain and low saturation voltage. The OLH57005701 products are functionally compatible to 6N138, 6N139, and 6N140A optocouplers. The performance of the OLH57005701 products under a radiation environment is significantly improved over standard phototransistors. FeaturesRugged and reliable hermetic Dual Inline Package (DIP)Performance guaranteed over full military temperature rangeHigh isolation voltage, 3000 VDCLow input current, 0.5 mALow power consumptionHigh Common Mode Rejection (CMR )Radiation tolerant design

The OLH 400 has high current transfer ratio at very low input currents making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfacing or RS232C data transmission systems. Each OLH 400 has a light emitting diode and an integrated photodiode Darlington detector IC mounted and coupled in a custom hermetic TO-5 package providing 1000 Vdc electrical isolation between input and output. The Darlington detector has an integrated base to emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington design. The internal shield provides excellent common mode immunity performance. FeaturesElectrical parameters guaranteed over 55 C to +125 C ambient temp. range1000 Vdc electrical isolationLow input current - 0.5 mALow output saturation voltage - 0.1V typicalHigh current transfer ratio - 1000% typicalLow power consumptionSimilar to industry standard parts - 6N138 6N139 in plastic and 6N140 in hermetic DIP packagesRadiation Tolerant100% hi-rel screenings are offered

The OLF400 has high current transfer ratio at very low input currents making it ideal for applications such as Metal Oxide Semiconductor (MOS), Complementary MOS (CMOS), and low power logic interfacing or RS232C data transmission systems. Each OLF400 has a light emitting diode and an integrated photodiode Darlington detector IC mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The Darlington detector has an integrated base-emitter resistor for superior high temperature performance. The split Darlington design permits lower output saturation voltage and higher switching speed operation than possible with conventional photodarlington design. The internal shield provides excellent common mode immunity performance.

The OLS449 is specifically designed for high reliability and space applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with a high current transfer ratio (CTR) and low saturation VCE. Each optocoupler consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic six-pin leadless chip carrier (LCC) package. Electrical parameters are similar to the JEDEC registered 4N49 optocoupler, but with a higher CTR and better CTR degradation characteristics due to radiation exposure. The OLS449 is designed for a low LED operating current while providing excellent radiation tolerance margins. The OLS449 has 100 percent high-reliability screenings available. FeaturesRadiation tolerant version of the 4N49UHigh current transfer ratio (CTR) is guaranteed:Over 55 C to +100 C ambient temperature rangeAt LED current of 1mA1000 VDC electrical isolationSame reliable processing and construction as the OLS249, but the a higher CTRHigh-reliability screenings are available

The OLS2449 is specifically designed for high-reliability applications that require optical isolation in radiation environments such as gamma, neutron, and proton radiation with high current transfer ratio (CTR) and low saturation VCE. Each optocoupler channel consists of an LED and N-P-N silicon phototransistor that is electrically isolated, but optically coupled inside a hermetic 8-pin leadless chip carrier (LCC) package. The electrical parameters are similar the JEDEC registered 4N49U optocoupler, but with a higher CTR and better CTR degradation characteristics due to radiation exposure. FeaturesSame reliable processing and construction as the OLS049, but with a higher current transfer ratio (CTR)CTR is:Guaranteed over 55 C to +100 C ambient temperature rangeHigh at low LED currentsHigh BVCEO, 65V minimum1500 VDC electrical isolationHigh-reliability screening is available

Miniature Phototransistor Optocoupler For Hybrid Assembly OverviewThe OLI100 is designed especially for hybrid applications that require optical isolation with a high current transfer ratio and low saturation VCE. The device consists of a light emitting diode, and an N-P-N silicon phototransistor mounted and coupled in a miniature custom ceramic package. The very low input current makes the OLI100 well suited for direct CMOS to Low Power Schottky Transistor to Transistor Logic (LSTTLTTL) interfaces. The OLI100 is mounted by standard hybrid assembly with nonconductive epoxies. Gold or aluminum wire bonding can be used to make electrical connections for maximum placement flexibility. FeaturesCurrent transfer ratio guaranteed over 55 C to +125 C ambient temperature rangeElectrical isolation: 1500 VDCHigh current transfer ratio: 100% minimum over temperatureHigh current transfer ratio at low input current: 100% at IF = 1 mA over temperatureHigh reliability and rugged constructionCTR-comparable to Darlington output but with low saturation VCE = 0.15 V typicalSimilar to 4N2X, 4N3X type optocouplersCustom package available