Applied Materiald

For high aspect ratio Ni(Pt) logic contact silicidation, the system operates in high-pressure, capacitively coupled plasma mode that produces higher metal ionization density and hence better bottom coverage.

The Applied Materials Charger UBM PVD system defines a new standard in metal deposition productivity and reliability for chip packaging. Specifically designed for UBM, redistribution layer (RDL), and CMOS image sensor applications, the Charger system's new linear architecture more than doubles the wafer output of competing systems to deliver the highest productivity available. In addition, proprietary Isani wafer treatment technology allows the system to process ten times more wafers between servicing for best-of-breed uptime and the lowest available per-wafer cost.

Our Endura platform is the most successful metallization system in the history of the semiconductor industry. Endura systems revolutionized semiconductor metallization by delivering breakthrough technologies and levels of reliability, serviceability and flexibility that far surpassed existing capabilities. The vast majority of microchips made in the last 20 years have been created using one of the more than 4, 500 Endura systems that have shipped across the globe to over 100 customers.

Advanced chamber materials reduce cost of ownership and increase throughput by making possible "clean-mode" operation. In addition, first-wafer effects are eliminated, thereby ensuring wafer-to-wafer process repeatability, as proven in production.

In advanced devices, the speed of data transfer from DRAM structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates and contacts. The Endura HAR Cobalt PVD system lowers resistance in periphery contacts to enable higher drive current at lower voltage.

Continued process scaling is driving new levels of device performance. ALD is essential for a growing number of the device-critical process steps in 3D NAND and logic FinFET fabrication. However, while the conformality and uniform film thickness achieved with ALD is still vital for CD control, additional demands are being made on ALD to deliver a growing range of high-quality, robust films within restrictive thermal budgets of next-generation nodes.