Our Products

Veecos award-winning EPIK 700 MOCVD system is the LED industrys highest productivity MOCVD system that reduces cost per wafer by up to 20 percent compared to previous generations. Available in one-and two-reactor configurations, EPIK 700 features breakthrough technologies, including the new IsoFlange center injection flow and TruHeat wafer coil that provide homogeneous laminar flow and uniform temperature profile across the entire wafer carrier. These technological innovations produce wavelength uniformity to drive higher yields in a tighter bin. EPIK 700 offers a 2.5x throughput advantage over other systems due to its large reactor size.

Designed for mass production, EPIK 700 accommodates 31x4, 12x6 and 6x8 wafer carrier sizes. Customers can easily transfer processes from existing TurboDisc systems to the new EPIK 700 MOCVD platform for quick-start production of high-quality LEDs. Because of the flexible EPIK 700 MOCVD platform, more upgrades, added benefits and future enhancements will continue to differentiate this world-class system.

Cost per wafer savings of up to 20 percent compared to previous generations
Best-in-class uniformity and process repeatability drive higher yield in a tighter bin
Industry's highest productivity reactor generates 2.5x throughput advantage compared to previous reactors
Maximum production with proven automation, enhanced serviceability, long campaigns between maintenance and improved footprint efficiency improvement compared to MaxBright MOCVD System

Precision Surface Processing's single wafer wet etch technology enables uniform selective etching on multiple process levels, free of cross-contamination. Etch uniformity better than 1% is routine. Whether for advanced packaging or FEOLBEOL wet etches, WaterEtch systems accomplish the highest yield process at the lowest manufacturing cost. When etch structures or films are needed in the active, backside, andor bevel areas, WaferEtch systems are a proven technical solution.The flagship of the WaferEtch platform, the TSV Revealer, is specifically configured to address the process of wafer thinning to reveal the interconnects. This has become a critical step in the manufacture of 2.5D and 3D-IC packaging for process control and cost reduction. The TSV Revealer replaces four tools required for the dry-etch approach: CMP, plasma etch, silicon thickness measurement, and wafer cleaning. Integration of a thickness measurement sensor in the etch system provides closed-loop control of the wafer etching process. The TSV Revealer achieves a significant reduction in CoO, making 3D TSVs more economically feasible.

Features:

Integrated thickness measurement
Arm movement compensation for radial thickness non-uniformities
Chemical recirculation for lowest CoO
Small footprint

Veeco's award-winning GENxplor R&D MBE System uses Veecos proven GEN10 MBE system growth chamber design and features unmatched process flexibility, perfect for materials research on emerging technologies such as UV LEDs, high-efficiency solar cells and high-temperature superconductors. Its efficient single frame design combines all vacuum hardware with on-board electronics to make it up to 40 percent smaller than other MBE systems, saving valuable lab space. Because the manual system is integrated on a single frame, installation time is reduced. The open architecture design of the GENxplor MBE system also improves ease-of-use, provides convenient access to effusion cells and easier serviceability when compared to other MBE systems. When coupled with Veecos recently introduced retractable sources, the GENxplor MBE system represents the state-of-the-art in oxide materials research.

High quality epitaxial layers on substrates up to 3" in diameter
Unique, single frame architecture improves ease-of-use, provides convenient source access and enhanced serviceablility
Efficient, all-in-one design combines manual system with on-board electronics for 40 percent lab space savings compared to other MBE systems
Ideal for cutting-edge research on a wide variety of materials including GaAs, nitrides and oxides
Molly software integrates easy recipe writing, automated growth control and always-on data recording
Optional Nova ultra high temperature substrate heater for proven performance at 1850
Direct scalability to GEN20, GEN200 and GEN2000 MBE systems

The Apex Gas Mixing System, powered by Veecos production-proven Piezocon Gas Concentration Sensor, allows manufacturers to reduce production costs by purchasing lower-cost, higher-concentration gases, then diluting at the point of use to immediately reduce gas purchase costs by as much as 60 percent. By using Piezocon to measure and control the mixture in real time, manufacturers eliminate the problems associated with constant flow mixers requiring wasted materials and constant scrubbing, furthering the already substantial cost savings. The stable output and precise control of gas concentration allows Apex to drive higher process tool up-time, eliminating the need to re-qualify after every gas cylinder change, reducingand in some cases fully eliminatingsystem down-time due to routine cylinder changes. Apex drives real-time control, high precision and reproducibility and lowers cost of ownership for semiconductor manufacturers.

Optimized for applications requiring low-concentration, high-precision and cost-sensitive gas mixtures
Improves repeatability by 10x or more when compared to individual gas cylinders
Increases system up-time by eliminating excursions and re-qualifications, and reducing test time
Immediately reduces gas purchase costs by as much as 60 percent
Seamlessly integrates with existing installed base for a wide range of applications including solar, semiconductor and more
The only gas mixing system that uses Veeco's Piezocon Gas Concentration Sensor for ppm-level control
For real-time control, high precision and repeatability, and lower cost of ownership, count on the Apex Gas Mixing System from Veeco.

Veecos Precision Gas Mixing System generates gas mixtures with improved concentration control for tighter process control and higher yield. Active control of mixture concentration compensates for changes or drifts in upstream concentration. For example: out of a 1 percent dopant premix, the Piezocon Precision Gas Mixing System can generate a 50ppm dopant gas mixture with a 0.5ppm or better concentration control, tank to tank and over the shelf life of the tank.

Cost savings: sourcing from a pure or from a higher concentration gas blend reduces frequency of tank exchange and minimizes tool down time; high ROI
Versatile: can handle most commonly used precursor or dopant gas mixtures
Convenient: allows process engineers to dial in the concentration required by the process at point-of-use over a wide range of concentration
Simpler logistics: allows facility engineers to reduce inventory of multiple concentration gas mixture
Ease-of-use: friendly user interface allows selection of active gas and of dilution gas, and setting point-of-use required concentration
Compact: can be installed in a small vented enclosure or VMB
For compliance with industry safety protocols, the GMS must be installed in a standard SEMI-compliant gas box.

Veecos new TurboDisc K475i AsP MOCVD System is the industrys best reactor for the production of red, orange, yellow (ROY) LEDs, as well as multi-junction III-V solar cells, laser diodes and transistors. The K475i system features a new reactor design incorporating Veecos Uniform FlowFlange technology producing films with very high uniformity and improved within-wafer and wafer-to-wafer repeatability with the industrys lowest particle generation. The simple design of the Uniform FlowFlange technology provides ease-of-tuning for fast process optimization and fast tool recovery time after maintenance for the highest productivity for applications such as lighting, solar, laser diodes, pseudomorphic high electron mobility transistors (pHEMTs) and heterojunction bipolar transistors (HBTs).

New Uniform FlowFlange technology design enables best-in-class uniformity and process repeatability capable of driving greater yields
Robust reactor design provides ease-of-use and faster recovery after maintenance for maximum uptime
Industrys highest productivity due to full automation
Production proven platform provides lowest cost of ownership

Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco's low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.

Introduces gas without thermal pre-cracking
CBr4 source for C doping in III-Vs
Complete CBr4 gas handling system offers precise control of dopant evaporation and incorporation
More than 50 in the field

Produce the highest quality optical thin films with improved levels of productivity and throughput with the award-winning SPECTOR-HT Advanced Ion Beam Sputtering System. Building on the proven performance of our SPECTOR family of ion beam systems, the SPECTOR-HT system offers excellent layer thickness control, enhanced process stability and the lowest published optical losses in the industry.

For cutting-edge optical interference coating applications ranging from bandpass filters to beam splitters to laser passives, the SPECTOR-HT has been engineered to improve key production parameters, such as target material utilization, optical endpoint control and process time. The SPECTOR-HT gives manufacturers the qualitative advantages of ion beam sputtering (IBS) technologylow scatter loss, high film purity, stable deposition rates and film thickness control of

Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.

Extremely efficient
Tailored to the task of providing dopant fluxes
Provides excellent incorporation uniformity
Designed for rapid stabilization time with minimal overshoot
Highly reproducible and reliable
Available for R&D and production with more than 620 in the field
The Veeco Dopant Source is designed for efficient operation, rapid thermal response, and excellent flux uniformity. To achieve good uniformity with the relatively small charge used for dopant materials, a conical PBN crucible with a large taper angle is used to ensure excellent flux distribution across the entire substrate platen without beam shadowing or collimation.

The source operates efficiently at the relatively high evaporation temperatures required for most dopant materials, without excessive thermal load on the surrounding MBE growth chamber. While small dopant sources are heated with a single filament, the larger dopants feature a pair of concentric heater filaments operated in parallel to provide the most reliable and efficient source heating and responsiveness.

Due to the small size of the Dopant Sources for single-wafer MBE systems, this source may be combined on a single mounting flange with a gas inlet tube, thereby expanding the range of dopants available in a single source port. The gas inlet, heated by the source filament, is intended for gases which do not require thermal pre-cracking, such as CBr4. Other custom configurations include two 5cc Dopant Sources mounted on a single 612mm flange or two 1.5cc sources mounted on a single 4.5114mm flange.